2N6274 डाटा शीट PDF( Datasheet )

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power a

2N6274 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com TECHNICAL DATA SHEET NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEV

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6274 DESCRIPTION ·High Switching Speed ·High DC Current Gain- : hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage- :

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustain