2N6052 डाटा शीट PDF( Datasheet )

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6052/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency s

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Vo

PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal c

2N6052 Silicon PNP Transistors Darlington Power Amplifier TO−3 Type Package Description: The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and l

2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustainin