2N5932 डाटा शीट PDF( Datasheet )

2N5932 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5932 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20