डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N5885 | (2N5883 - 2N5886) Complementary Silicon High-Power Transistors www.DataSheet4U.com
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High−Power Transistors
Complementary silicon high−power transistors are designed |
ON Semiconductor |
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2N5885 | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain-
: hFE= 20- @IC= 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
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2N5885 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N5883 2N5884 PNP 2N5885 2N5886 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epi |
Central Semiconductor |
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2N5885 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Motorola |
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2N5885 | NPN MULTI - EPITAXIAL POWER TRANSISTOR 2N5885
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043)
22.23 (0.875)
max.
MECHANICAL DATA Dimensions in mm(inches)
25.15 (0.99) 26.67 (1.05)
10.67 (0 |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |