2N5884 डाटा शीट PDF( Datasheet )

2N5884 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s

www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Pow

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2N5883 2N5884 DESCRIPTION ·With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are i

2N5883 2N5884 PNP 2N5885 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epi

2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A. • Exce