डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N5401C | PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Satu |
KEC |
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2N5401 | Amplifier Transistor | ON Semiconductor |
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2N5401 | PNP General Purpose Amplifier | Fairchild Semiconductor |
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2N5401 | Silicon NPN Transistor | NTE |
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2N5401 | AMPLIFIER TRANSISTOR | Motorola |
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2N5401 | PNP high-voltage transistors | Philips |
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2N5401 | HIGH VOLTAGE SWITCHING TRANSISTOR | UTC |
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2N5401G | Amplifier Transistors | ON Semiconductor |
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2N5401C | PNP TRANSISTOR | KEC |
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2N5401 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2N5401S | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
www.DataSheet.in | 2017 | संपर्क |