2N5401 डाटा शीट PDF( Datasheet )

2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch fo

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base

Bipolar Transistor Features: •  No External Components Required •  Internal Short-Circuit Current Limiting •  Internal Thermal Overload Protection Emitter 3 2 Base 1 Collector Description: A nega

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Satu

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May

2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .