2N5303 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sus

Bipolar Transistor NPN Collector 3 Features: •  High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A 2 Base 1 Emitter Descrip

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent saf

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltag

2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and

2N5303 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1