2N5301 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sus

2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent saf

Bipolar Transistor Features: •  High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitte

2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and

2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance ampl