डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N4233A | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and |
INCHANGE |
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2N4233A | POWER TRANSISTORS A
A
A
A
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Mospec Semiconductor |
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2N4233A | Bipolar NPN Device 2N4233A
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VC |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |