2N40 डाटा शीट PDF( Datasheet )

IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching

2N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 2A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a mi

2N4000 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.50

2N4001 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.50

ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92

ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92

www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Swit