2N3906S डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25�

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Sat

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3906SC EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. E