2N3767 डाटा शीट PDF( Datasheet )

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitt

2N3767 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500)

2N3766 (SILICON) 2N3767 CASE 80 (TO-66) Medium -power NPN silicon transistors, for use in switching, and medium-power-Qmplifier applications. Complement to PNP 2N3740 (2N3766) 2N3741 (2N3767). Collector con

2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base pr

2N3766 & 2N3767 NPN Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/518  TO-66 (TO-213AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symb

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·D