डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N3713 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
|
2N3713 | GENERAL PURPOSE POWER TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2N3713
GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS.
FEATURES:
. High Gain at High Current . Low Saturation Voltage : VcE(sat |
Toshiba |
|
2N3713 | SILICON NPN TRANSISTORS 2N3713 2N3715 2N3714 2N3716
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured |
Central Semiconductor |
|
2N3713 | NPN silicon power transistors 2N3713 thru 2N3716 (SILICON)
CASE 11
(TO-3)
NPN silicon power transistors for medium-speed
switching and amplifier applications. Complement to PNP types 2N3789 thru 2N3792.
MAXIMUM RATINGS
Rating
C/')llector |
Motorola |
|
2N3713 | Bipolar NPN Device 2N3713
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
|
2N3713 | (2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS
The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in |
Comset Semiconductor |
www.DataSheet.in | 2017 | संपर्क |