2N3209 डाटा शीट PDF( Datasheet )

2N3209 (SILICON) PNP SILICON ANNULAR TRANSISTOR designed for medium·speed saturated switching applications. • Low Collector· Emitter Saturation Voltage - VCE(sat) =0.15 Vdc (Max) @ IC = 10 mAdc • Low Out

2N3209 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1

Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209CSM HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209DCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 2.29 ± 0.20 (0.09

2N3209X MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS 4.32 (0.170) 12.7 (0.500) 5.33 (0.