डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N3174 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations fo |
Inchange Semiconductor |
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2N3174 | Bipolar PNP Device 2N3174
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar PNP Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |