2N3171 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations fo

2N3171 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performa