2N3055B डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2N3055B | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot v |
 INCHANGE |
|
| 2N3055 | Silicon NPN Transistor |  Toshiba |
|
| 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |  STMicroelectronics |
|
| 2N3055 | 15 AMPERE POWER TRANSISTORS |  Motorola Inc |
|
| 2N3055 | Silicon NPN Power Transistor |  NTE |
|
| 2N3055 | NPN Power Transistor |  TAITRON |
|
| 2N3055 | Complementary Silicon Power Transistors |  ON Semiconductor |
|
| 2N3055 | Silicon Planar Epitaxial NPN transistor |  Comset Semiconductor |
|
| 2N3055H | Silicon NPN Power Transistor |  Inchange Semiconductor |
|
| 2N3055A | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola Inc |
|
| 2N3055 | NPN POWER SILICON TRANSISTOR |  Microsemi Corporation |
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