2N3019 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Phil

® 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature h

2N3019 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSISTOR FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package 4.19 (0.16

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitte

30192N (SILICON) 2N3020 CASE 31 (TO·S) Collector connected to case NPN silicon annular transistors designed for highcurrent, high-frequency amplifier applications. MAXIMUM RATINGS Rating Collector-Emitter V

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collecto

2N3019 Silicon NPN Transistor Audio Output, Video, Driver TO−5 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . .