2N2906E डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2N2906E | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Sat |
 KEC |
|
| 2N2906 | PNP switching transistors |  NXP |
|
| 2N2906A | High Speed Switching Transistor |  Multicomp |
|
| 2N2906 | Silicon Planar PNP Transistor |  STMicroelectronics |
|
| 2N2906A | General Purpose Amplifier Transistors |  Comset Semiconductor |
|
| 2N2906A | PNP Silicon Annular Hermetic Transistors |  Motorola |
|
| 2N2906A | Radiation Hardened PNP Transistors |  VPT |
|
| 2N2906 | PNP Silicon Annular Hermetic Transistors | Motorola |
|
| 2N2906U | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
|
| 2N2906 | PNP SILICON TRANSISTOR |  Central Semiconductor |
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| 2N2906 | SILICON PLANAR EPITAXIAL PNP TRANSISTOR |  TT |
शेयर लिंक :
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