2N2369 डाटा शीट PDF( Datasheet )

2N2369 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Satura

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors

2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications

2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369

High Speed Metal Can Transistor (NPN) Features • High Speed Switching Application • Low Power • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-2