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SEMTECH |
NPN Silicon Transistor |
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Philips |
NPN switching transistors • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 3 2N2222; 2N2222A PINNING PIN 1 2 3 emitter base colle |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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TAITRON |
Small Signal General Purpose Transistors • Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams TO-18 Maximum Ratings (T Ambient=25ºC unless |
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GOOD-ARK |
NPN Transistor useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2222A NPN Transistor ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Vol |
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Diotec |
Si-Epitaxial Transistors PN2222A / 2N2222A 75 V 40 V 6V 625 mW 1) 600 mA 800 mA -65...+150°C -65…+150°C Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V Collector saturation voltage – Kollektor-Sättigungsspannung IC = 150 mA, |
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STMicroelectronics |
HIGH SPEED SWITCHES useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage. TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VC |
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TT |
NPN Transistor Ceramic 3 pin surface mount package (UBN) Miniature package to minimize circuit board area Hermetically sealed Processed per MIL-PRF-19500/255 Same footprint and pin-out as many SOT-23 package transistors Description: The 2N2222AUB (T |
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ON Semiconductor |
Small Signal Switching Transistor • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − |
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SEMICOA |
Silicon NPN Transistor • Hermetically sealed TO-18 metal can • Also available in chip configuration • Chip geometry 0400 • Reference document: MIL-PRF-19500/255 Benefits • Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR • Radiation testing available TC = 25°C un |
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Central Semiconductor |
SURFACE MOUNT SILICON NPN TRANSISTOR • Surface mount equivalent to 2N2222A • Low noise • Highly reliable hermetic package • SOT-23 footprint compatible MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base |
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Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 50 Max. Unit Vdc µAdc ηAdc µAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc C |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 50 Max. Unit Vdc µAdc ηAdc µAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc C |
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Microsemi |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Microsemi |
Rad Hard NPN Silicon Switching Transistor JEDEC registered 2N2222A TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR/MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose r |
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Microsemi |
Rad Hard NPN Silicon Switching Transistor JEDEC registered 2N2222A TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR/MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose r |
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Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector |
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Central |
NPN SILICON TRANSISTOR |
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