2N12 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance

UNISONIC TECHNOLOGIES CO., LTD 2N120 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for

A2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current switching in line and core driver applications. CA5E~(TO.5~1 ~ C

A2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current switching in line and core driver applications. CA5E~(TO.5~1 ~ C

5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT

5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx