28C64 डाटा शीट PDF( Datasheet )

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before

X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Tim

Obsolete Device 28C64A 64K (8K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or

Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and A

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum (Standard)

CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby: 100 µA max. I Simple write operation: – On-chip ad