25N60 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistanc

FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features • RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Ty

MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 mW FCH25N60N Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench fi