डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
23N50 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.245Ω(Max) ·100% avalanche tested ·Mini |
INCHANGE |
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23N50E | N-CHANNEL SILICON POWER MOSFET FMH23N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switchin |
Fuji Electric |
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23N50E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
23N50E
Preliminary
23A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low |
UTC |
www.DataSheet.in | 2017 | संपर्क |