डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
20N60 | 20A 600V N-channel Enhancement Mode Power MOSFET 20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss |
ROUM |
|
20N60 | IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA |
IXYS |
|
20N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with plan |
UTC |
|
20N60A | IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA |
IXYS |
|
20N60A | N-channel MOSFET Description
JMP N-channel MOSFET
Features
600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% Avalanche Tested
JMP(S.Z.F)20N60A
Application
|
JieJie |
|
20N60A4D | HGTG20N60A4D HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs an |
Fairchild Semiconductor |
|
20N60A4D | N-Channel IGBT SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG20N60A4D
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. Thi |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |