डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS423 | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS423
Ultra-High-Speed Switching Applications
• Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max)
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Toshiba |
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1SS426 | Silicon Diode | Toshiba |
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1SS423 | Silicon Diode | Toshiba |
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1SS422 | Silicon Diode | Toshiba |
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1SS421 | Silicon Diode | Toshiba |
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1SS420 | Silicon Diode | Toshiba |
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1SS422 | High Speed Switching Diode | MDD |
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1SS422 | High speed Switching Diode | GME |
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1SS422 | High Speed Switching Diode | PACELEADER |
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1SS422 | DIODE | WEJ |
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1SS422 | High Speed Switching Diodes | Kexin |
www.DataSheet.in | 2017 | संपर्क |