1SS420 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 µA (max) 1SS420 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol R

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25