डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS418 | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
• Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5mA
1SS418
Unit: mm
CATHODE MARK
Absolute Maximum Ratings |
Toshiba |
|
1SS413CT | Schottky Barrier Diode | Toshiba |
|
1SS412 | Silicon Diode | Toshiba |
|
1SS417 | Silicon Diode | Toshiba |
|
1SS413 | Schottky Barrier Diode | Toshiba |
|
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
|
1SS419 | Silicon Diode | Toshiba |
|
1SS417TM | HIGH SPEED SWITCHING DIODE | Pan Jit International |
|
1SS417CT | Silicon Diode | Toshiba |
|
1SS41 | Switching Diode | Rohm |
|
1SS418 | Silicon Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |