1SS417 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5μA (Max.)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 • Small package • Low forw

P1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Voltage 40 V Current 100 mA Features  Small package  Low forward voltage : VF(3)=0.51V(typ.)  Low reverse current : IR=5A(Max.)  Lead free in compl

1SS417TM HIGH SPEED SWITCHING APPLICATION FEATURES • Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) • In compliance with EU RoHS 2002/95/EC directives ME