डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS416CT | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
1SS416CT
High Speed Switching Application
z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
Unit: mm
CATHODE MARK |
Toshiba |
|
1SS416CT | Silicon Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |