डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS413CT | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small tota |
Toshiba |
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1SS413CT | Schottky Barrier Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |