डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE 1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
Q
Top View Marking Code: "Q" Simplified outline SOD-523 and symbol
Absolute |
SEMTECH |
|
1SS413 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
1SS413
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS413
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial produc |
Toshiba |
|
1SS413CT | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small tota |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |