1SS401 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ.) :

Schottky Barrier Diode FEATURES  Small total capacitance.  Low reverse current.  Low forward voltage:VF=0.38V(typ). Pb Lead-free Production specification 1SS401 APPLICATIONS  For general purpose

® WON-TOP ELECTRONICS 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring for Transient and ESD Protection  For General Purp

1.ANODE 2. NC 3. CATHODE Features — Low forward voltage : VF=0.38V(typ.) — Low reverse current : IR=50uA(max) — Small total capacitance : CT =46pF(typ.) MARKING: 1SS401 Schottoky Diode SOT-323 Dimensions in

Schottoky DIODES FEATURES Low forward voltage : VF=0.38V(typ.) Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) 1SS4 01 SOT-323 1.ANODE 2. NC 3. CATHODE MARKING: Maximum Ratings @T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 Schottoky Barrier Diode FEATURES Low forward voltage Lo w reverse current Small total capacitance SOT-323 MARKING: