1SS388 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm  Small package  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μ

1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute

1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE FEATURES • Low forward voltage : VF(3)=0.54V(typ.) • Low reverse current : IR=5µA(typ.) • In compliance with EU RoHS 2002/95/EC directives APPLICATIONS •

1SS388 High Speed Switching Diode SOD-523 Features — Low forward voltage. — Low reverse current. — Small package. Applications — High-speed switching in surface mounted circuits. Dimensions in inches and

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS388 Features • High speed switching diode • Surf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current SOD-523 MARKING: S3

SMD Type Diodes HIGH SPEED SWITCHING APPLICATION 1SS388 Features Small Package Low Forward Voltage :VF(3) = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3