डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS385FV | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package
Absolute Maximum Ratings (T |
Toshiba |
|
1SS385F | Diode | Toshiba Semiconductor |
|
1SS385FV | Silicon Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |