डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS384 | Silicon diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS384
Low Voltage High Speed Switching
z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
1SS384
U |
Toshiba Semiconductor |
|
1SS388 | SILICON EPITAXIAL SCHOTTKY BARRER DIODE | EIC |
|
1SS388 | Silicon Diode | Toshiba Semiconductor |
|
1SS389 | Silicon Diode | Toshiba Semiconductor |
|
1SS387 | High Speed Switching Diode | MDD |
|
1SS381 | Silicon diode | Toshiba Semiconductor |
|
1SS389 | Schottky Barrier Diode | MDD |
|
1SS387 | Diode | Toshiba Semiconductor |
|
1SS385FV | Silicon Diode | Toshiba |
|
1SS385F | Diode | Toshiba Semiconductor |
|
1SS389 | Switching Diode | MCC |
www.DataSheet.in | 2017 | संपर्क |