डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS379 | Silicon Epitaxial Schottky Barrie Diode TOSHIBA Diode Silicon Epitaxial Planar Type
1SS379
General Purpose Rectifier Applications
1SS379
Unit: mm
AEC-Q101 Qualified (Note1)
Small package
: SC-59
Low forward voltage
: VF = 1.0 V (typ |
Toshiba Semiconductor |
|
1SS376 | Switching diode | Rohm |
|
1SS375 | Schottky Barrier Diode | Sanyo Semicon Device |
|
1SS378 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS370 | SURFACE MOUNT FAST SWITCHING DIODE | LITE-ON |
|
1SS373 | Diode | Toshiba Semiconductor |
|
1SS370 | Diode | Toshiba Semiconductor |
|
1SS374 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS379 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS377 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS370 | Surface Mount Switching Diode | LGE |
www.DataSheet.in | 2017 | संपर्क |