डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS378 | Silicon Epitaxial Schottky Barrie Diode TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type
1SS378
High Speed Switching
1SS378
Unit: mm
z Low forward voltage z Small package
: VF = 0.23V (typ.) @IF = 5mA : SC-70
Absolute Maximum Ratings |
Toshiba Semiconductor |
|
1SS376 | Switching diode | Rohm |
|
1SS375 | Schottky Barrier Diode | Sanyo Semicon Device |
|
1SS378 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS370 | SURFACE MOUNT FAST SWITCHING DIODE | LITE-ON |
|
1SS373 | Diode | Toshiba Semiconductor |
|
1SS370 | Diode | Toshiba Semiconductor |
|
1SS377 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS374 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS379 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS372 | SURFACE MOUNT SCHOTTKY BARRIER | Power Silicon |
www.DataSheet.in | 2017 | संपर्क |