डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS374 | Silicon Epitaxial Schottky Barrie Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS374
High Speed Switching Application
1SS374
Unit: mm
z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings ( |
Toshiba Semiconductor |
|
1SS376 | Switching diode | Rohm |
|
1SS375 | Schottky Barrier Diode | Sanyo Semicon Device |
|
1SS378 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS370 | SURFACE MOUNT FAST SWITCHING DIODE | LITE-ON |
|
1SS373 | Diode | Toshiba Semiconductor |
|
1SS370 | Diode | Toshiba Semiconductor |
|
1SS379 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS377 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS374 | Silicon Epitaxial Schottky Barrie Diode | Toshiba Semiconductor |
|
1SS370 | Surface Mount Switching Diode | LGE |
www.DataSheet.in | 2017 | संपर्क |