1SS373 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 1SS373 Unit in mm Maximum Ratings (Ta = 25°C) Cha

1SS373 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application Features • Low forward voltage: VF = 0.23V (typ.) @IF = 5mA PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SY Absolute Max

SMD Type Diodes HIGH SPEED SWITCHING APPLICATION 1SS373 Features Small Package Low forward voltage :VF = 0.23V(TYP.) IF = 5mA +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3 -0.05 Unit: mm 0.6+0.1 -0.1 -