1SS369 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max) 1SS369 Unit in mm Ma

1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current Applications • High Speed Switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SU Top View Markin