डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS362 | Diode TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
Ultra High Speed Switching Application
z Small package
z Low forward voltage
: VF(3) = 0.97 V (typ.)
z Fast reverse recovery time : trr = 1.6 ns (typ.)
z |
Toshiba Semiconductor |
|
1SS365 | Schottky Barrier Diode | Sanyo Semicon Device |
|
1SS361 | Silicon Diode | Toshiba Semiconductor |
|
1SS360F | Diode | Toshiba Semiconductor |
|
1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE | SEMTECH |
|
1SS360 | Diode | Toshiba Semiconductor |
|
1SS362 | Diode | Toshiba Semiconductor |
|
1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
|
1SS368 | SILICON EPITAXIAL PLANAR DIODE | SEMTECH |
|
1SS367 | Silicon Diode | Toshiba Semiconductor |
|
1SS361LPH4 | SURFACE MOUNT SWITCHING DIODE | Diodes |
www.DataSheet.in | 2017 | संपर्क |