डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS294 | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
AEC-Q101 Qualified (Note1)
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse surrent
: IR = |
Toshiba Semiconductor |
|
1SS294 | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
|
1SS293 | Diode | Toshiba Semiconductor |
|
1SS295 | Diode | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |