डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS293 | Diode TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
: VF (3) = 0.54V (typ.) : IR = 5µA (max)
1SS293
Unit in m |
Toshiba Semiconductor |
|
1SS294 | Diode | Toshiba Semiconductor |
|
1SS293 | Diode | Toshiba Semiconductor |
|
1SS295 | Diode | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |