1SS196 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low forward voltage: VF (3) = 0.90 V (typ.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 G3 SOT-23 1 3 2 Maximum Rat

Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS196 MARKING: G3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Pa

Production specification Surface mount switching diode FEATURES  Low forward voltage VF(3)=0.9V(typ). Pb Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:trr=1.6ns(ty

® WON-TOP ELECTRONICS 1SS196 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Sw

RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction tempe

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications M