1SS193 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application 1SS193 Unit: mm  Small package : SC-59  Low forward voltage : VF (3) = 0.9V (typ.)  Fast reverse recovery

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: F3 F3 F3 SOT-23 1 3 2 Soli

Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF(3)=0.9V(typ). Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:trr=1.6ns(

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS193 Features • Low Leakage Current • Surface Moun

SURFACE MOUNT FAST SWITCHING DIODE 1SS193 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purpose switching applications MECHANICAL DATA • Case:

® WON-TOP ELECTRONICS 1SS193 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Sw

RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction tempe