1SS190 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application 1SS190 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time

1. N.C 2. CATHODE 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse v

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS190 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage j

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: E3 E3 SOT-23 1 3 2 Maximum

Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.92V(typ).  Small total capacitance:CT=2.2pF(typ).  Fast reverse recovery time:trr=1.6ns(typ) Pb Lead-free 1

SURFACE MOUNT FAST SWITCHING DIODE 1SS190 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purpose switching applications MECHANICAL DATA • Case:

® WON-TOP ELECTRONICS 1SS190 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Sw