डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS133 | Switching diode 1SS133
Diodes
Switching diode
1SS133
!Applications High speed switching !External dimensions (Units : mm)
CATHODE BAND (YELLOW) φ0.4±0.1
!Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns T |
Rohm |
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1SS133 | SWITCHING DIODES |
Leshan Radio Company |
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1SS133 | HIGH SPEED SWITCHING DIODE 1SS133
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case Weight: a |
EIC |
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1SS133 | High Speed Switching Diode MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
% !"#
1SS133
Features
• Lead Free Finish/Rohs Compliant (Not |
MCC |
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1SS133 | Silicon Epitaxial Planar Switching Diode Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133
Silicon Epitaxial Planar Switching Diode
ABA
C D Cathode Mark
Maximum Ratings (TA=25℃ unless otherwise noted)
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JGD |
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1SS133 | Silicon Epitaxial Planar Switching Diode 1SS133
Silicon Epitaxial Planar Switching Diode
Features • Glass sealed envelope • High speed • High reliability
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak |
PACO |
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1SS133M | Hermetically Sealed Glass Switching Diodes Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO- |
Taiwan Semiconductor |
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